Abstract

The formalism for calculating the temperature distribution produced in a semi-infinite material by two-dimensional scanning with a circular gaussian electron beam, taking its penetration effect into account, has been derived using a Green's function analysis. The pseudo-line condition is examined for the sinusoidal scanning of practical interest, and a set of numerical calculation curves is presented. It is found that the pseudo-line-shaped temperature distribution is drastically changed from a concave to a convex profile by the increase in the oscillating width of the sinusoidal scanning. An approximate application of great technological interest, that of silicon on silicon dioxide, is also discussed.

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