Abstract
AbstractA key problem in some applications of pseudo spin‐valve structures (PSV) is the choice of appropriate materials for soft and hard ferromagnetic layers and their thickness to ensure a high difference in the switching fields. We show that this can be achieved using a NiO/Co structure as a hard magnetic layer. By varying the thickness of the constituent layers, good symmetrical switching characteristics have been shown in PSV structures with NiO/Co as a hard magnetic layer. The most important features of our PSV structures with suitable selected thickness of particular layers are: a relatively high value of GMR amplitude (up to 9% at RT) due to a possible electron specular reflection at the NiO/Co interfaces, a high coercivity (∼500 Oe) of hard magnetic layer resulted from a specific interaction of a 15 nm thick antiferromagnetic NiO with a 2 nm thick Co layer, nearly symmetrical magnetoresistance transfer curves MR(H) due to negligible unidirectional anisotropy field of NiO/Co bilayer with NiO thickness <15 nm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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