Abstract
Pseudo shunts are artifacts, which may occur during lock-in thermography (LIT) measurements of solar cells. They are caused at the interface between the solar cell and the sample holder or at current feed-in points and may affect LIT investigations detrimentally, leading to misinterpretation of LIT images. The apparent current density–voltage ( J – V ) characteristics of pseudo shunts show a significantly steeper slope than that of real shunts, and even of good parts of the cell, and cannot be fitted by the common one- or two-diode models. The cause of pseudo shunts is found to be a local contact on the backside of wafer-based silicon solar cells to the chuck, surrounded by a noncontacted region. A method is proposed to prevent the appearance of pseudo shunts.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
