Abstract
The Brewster angle has long been used to determine the index of refraction of nonabsorbing material. Semiconductors and other absorbing materials exhibit a nonzero minimum at a “pseudo‐Brewster” angle which depends on the wavelength of incident light and the optical constants of the materials. Since semiconductor infrared optical constants are strongly dependent on the carrier density, the pseudo‐Brewster angle is an indication of this density. An infrared, optical constant model for semiconductors has been used to calculate calibration curves relating carrier concentration in silicon to the pseudo‐Brewster angle for several wavelengths, the range of carrier concentrations being limited by the wavelength employed. Experimental results for silicon are presented for a wavelength of 3.391 µm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
