Abstract
The Brewster angle has long been used to determine the index of refraction of nonabsorbing material. Semiconductors and other absorbing materials exhibit a nonzero minimum at a “pseudo‐Brewster” angle which depends on the wavelength of incident light and the optical constants of the materials. Since semiconductor infrared optical constants are strongly dependent on the carrier density, the pseudo‐Brewster angle is an indication of this density. An infrared, optical constant model for semiconductors has been used to calculate calibration curves relating carrier concentration in silicon to the pseudo‐Brewster angle for several wavelengths, the range of carrier concentrations being limited by the wavelength employed. Experimental results for silicon are presented for a wavelength of 3.391 µm.
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