Abstract
The long-term reliability of electroplated copper thin-film interconnections varied drastically depending on their crystallinity. The crystallinity was mainly dominated by the seed layer material for electroplating because of the lattice mismatch between the seed layer material and copper. Even though tantalum is indispensable for a barrier of copper diffusion into silicon or oxide, the quality of thin copper films is rather low because there is a large mismatch in the lattice constant between tantalum and copper. Ruthenium is one of the most effective materials for improving the crystallinity of the electroplated copper thin films and the stability of the copper thin films electroplated on the ruthenium seed layer was very high during annealing up to 200℃.
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