Abstract
In this study, the dominant diffusion path in the electroplated copper interconnections used for TSV (through silicon vais) was investigated in detail under the EM (Electromigration) load. The micro texture of the interconnection was analyzed by using an EBSD (Electron Back-scattered Diffraction) method. There were two dominant diffusion paths: the interfaces and random grain boundaries formed at the center of the interconnection. Both paths consisted of porous random grain boundaries with low crystallinity. The random grain boundaries at the center of the interconnection remained even after the annealing at 400℃. Therefore, it is necessary to improve the crystallinity of the as-electroplated film to improve the EM resistance of the electroplated interconnections.
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