Proximity effects in formation of photonic crystals by lithographic methods

Abstract

Proximity effects in formation of photonic crystals in the form of ordered arrays of holes of similar radii close to 100 nm by methods of electron beam lithography are considered. The coefficients of the proximity function characterizing the contribution of back-scattered and secondary electrons to the exposure dose are experimentally determined. It is demonstrated that the minimum standard deviation from the mean radius of the elements in the array is provided by means of the proximity effect correction with the use of experimentally obtained coefficients and an iterative equation with an increased contribution of back-scattered electrons.