Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator

Abstract

Black phosphorus is a promising candidate for future nanoelectronics with a moderate electronic band gap and a high carrier mobility. Introducing the magnetism into black phosphorus will widely expand its application scope and may present a bright prospect in spintronic nanodevices. Here, we report our first-principles calculations of spin-polarized electronic structure of monolayer black phosphorus (phosphorene) adsorbed on a magnetic europium oxide (EuO) substrate. Effective spin injection into the phosphorene is realized by means of interaction with the nearby EuO(111) surface, i.e., proximity effect, which results in spin-polarized electrons in the 3p orbitals of phosphorene, with the spin polarization at Fermi level beyond 30%, together with an exchange-splitting energy of ∼0.184 eV for conduction-band minimum of the adsorbed phosphorene corresponding to an energy region where only one spin channel is conductive. The energy region of these exchange-splitting and spin-polarized band gaps of the adsorbed phosphorene can be effectively modulated by in-plane strain. Intrinsically high and anisotropic carrier mobilities at the conduction-band minimum of the phosphorene also become spin-polarized mainly due to spin polarization of deformation potentials and are not depressed significantly after the adsorption. These extraordinary properties would endow black phosphorus with great potentials in the future spintronic nanodevices.