Abstract
We have measured the very low temperature (down to 30 mK) subgap resistance of titanium nitride (Superconductor, T c =4.6 K )/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature. This observed behavior is due to coherent backscattering towards the interface by disorder in the Silicon (“reflectionless tunneling”). This effect is also observed in the voltage dependence of the resistance (zero-bias anomaly) at low temperature ( T<300 mK ). The overall resistance behavior (in both its temperature and voltage dependence) is compared to existing theories and values for the depairing rate and the barrier resistance are extracted.
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