Abstract
Our conventional proximity effect correction program has been improved to fabricate X-ray masks in a subtractive process. The improved program calculates a correction dose for each exposure pattern, using an offset energy map. Two partitioning steps related to delineation and mesh boundary are introduced to improve the correction accuracy. The mesh size for calculating the offset energy map is determined to be 0.2 µ m at 30 kV to maintain the error in the dose calculation within 4%. Using this program, 0.2-µ m-level LSI patterns can be fabricated even at comparatively low acceleration voltage of 30 kV.
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