Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography

Abstract

A new method for proximity effect correction, suitable for large-field electron-beam (EB) projection lithography with high accelerating voltage, such as SCALPEL and PREVAIL in the case where a stencil mask is used, is discussed. In this lithography, a large-field is exposed by the same dose, and thus, the dose modification method, which is used in the variable-shaped beam and the cell projection methods, cannot be used in this case. In this study, we report on development of a new proximity effect correction method which uses a pattern modified stencil mask suitable for high accelerating voltage and large-field EB projection lithography. In order to obtain the mask bias value, we have investigated linewidth reduction, due to the proximity effect, in the peripheral memory cell area, and found that it could be expressed by a simple function and all the correction parameters were easily determined from only the mask pattern data. The proximity effect for the peripheral array pattern could also be corrected by considering the pattern density. Calculated linewidth deviation was 3% or less for a 0.07-µm-L/S memory cell pattern and 5% or less for a 0.14-µm-line and 0.42-µm-space peripheral array pattern, simultaneously.