Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing

Abstract

In order to obtain highly accurate patterns for 0.13micrometers design rule and below by electron beam exposure system with high throughput, it is necessary to use block exposure system and to correct proximity effect. We have developed proximity effect correction system for block exposure system using supplementary exposure method. By using this system, line width difference for pattern area density from 5 percent to 40 percent decreased from 70nm to 15nm in 0.13 micrometers line and space patterns. Line width difference between the proximate and isolated region also decreased from 70nm to 20nm. Necessity of proximity effect correction considering coulomb interaction effect is also pointed out.