Proton radiation damage effects on the response of high speed communication avalanche photodiodes (notice of removal)

Ahmed Nabih Zaki Rashed,Mohamed M E El-Halawany

doi:10.1117/1.oe.52.1.014003

Ahmed Nabih Zaki Rashed, Mohamed M E El-Halawany

Open Access

https://doi.org/10.1117/1.oe.52.1.014003

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Abstract

Subsequent to its publication in Optical Engineering, SPIE learned that a significant portion of this paper was previously published as “Harmful Proton Radiation Damage and Induced Bit Error Effects on the Performance of Avalanche Photodiode Devices,” in International Journal of Multidisciplinary Sciences and Engineering, Vol. 2, No. 4 (July 2011). Double publication violates SPIE Code of Ethics and consequently the paper has been removed from Optical Engineering by the publisher. The Authors

Highlights

It is important to study the effects of nuclear radiation on the performance of optoelectronic devices
The device modeling has been deeply investigated under the harmful proton irradiation fluences and its effects on the avalanche photodiode devices performance characteristics were based on the suggested operating parameters
As high proton irradiation fluences increase, an increase of irradiation sensitivity is seen for models under study

Summary

Introduction

It is important to study the effects of nuclear radiation on the performance of optoelectronic devices. The study of nuclear radiation effects, on semiconductors, shows that two types of defects are introduced. They are ionization damage and displacement damage. Both ionization defects and displacement damage could lead to permanent damage of the semiconductor material.[1,2,3,4,5,6,7,8] Ionization damage is mostly transient and, usually, causes little permanent damage to the photodiode performance for total doses below 105 rad (Si).[9,10,11,12] Previous studies, of radiation damages of avalanche photodiodes (APDs), used either gamma rays, electrons, protons, or neutrons as the radiation sources.[13,14,15,16,17,18] Irradiation primarily produces ionization defects such as broken bonds. We focus on photodiode and APD technologies that are commonly found in commercially available devices since they are the most practical option for nuclear applications designers

APD Device Modeling Analysis

Vb n n Vb

Simulation Results and Performance Analysis

Conclusions