Proton irradiation of various resistivity silicon detectors

Abstract

Future high energy physics experiments at CERN's Large Hadron Collider will use high precision silicon detectors for tracking purposes. The hadronic component of the radiation received threatens the lifetime of these detectors and it is vital to choose the silicon starting material to maximise the performance and lifetime. Ion-implanted silicon detectors with various initial resistivities and germanium concentrations have been irradiated with high energy protons up to a fluence of 10/sup 14/ cm/sup -2/. The change in leakage current and full depletion voltage have been studied both as a function of fluence and of time after irradiation. Measurements were made up to 100 days post-irradiation at room temperature and then using heating techniques to accelerate processes up to the equivalent of over 10 years at room temperature. The leakage-current damage constant is shown to be independent of the starting material while the conduction type inversion point and the long-term annealing of the depletion voltage are sensitive to the initial resistivity and impurity concentrations.