Abstract
Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after irradiation. There are no systematic changes in photon count rate observed or in the amount of after-pulsing. The devices are rendered non-operational following a fluence of 8.1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> 50-Mev protons/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for room temperature operation.
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