Proton irradiation effects on GaN-based epitaxial structures

Abstract

Radiation hardness of different types of GaN based epitaxial structures which can be used as elements of electronic devices is studied by Hall effect,CV and IV measurements, as well as photoluminescence and Raman scattering. It is shown that proton irradiation leads to formation of deep acceptor states reducing conductivity of high electron mobility transistors (HEMTs) and Si-doped layers and is accompanied by a redistribution of the defect-related lines in the photoluminescence spectra. Our results demonstrate that proton irradiation increases conductivity for GaN:C, while decreases it for GaN:Fe and GaN:(Fe+C) layers.