Proton induced gamma-ray production cross sections and thick-target yields for boron, nitrogen and silicon

Abstract

The excitation functions for the reactions 14N(p,p′γ)14N, 28Si(p,p′γ)28Si and 29Si(p,p′γ)29Si were measured at an angle of 55° by bombarding a thin Si3N4 target with protons in the energy range of 3.6–6.9MeV. The deduced γ-ray production cross section data is compared with available literature data relevant for ion beam analytical work. Thick-target γ-ray yields for boron, nitrogen and silicon were measured at 4.0, 4.5, 5.0, 5.5, 6.0 and 6.5MeV proton energies utilizing thick BN and Si3N4 targets. The measured yield values are put together with available yield data found in the literature. The experimental yield data has been used to cross-check the γ-ray production cross section values by comparing them with calculated thick-target yields deduced from the present and literature experimental excitation curves. All values were found to be in reasonable agreement taking into account the experimental uncertainties.