Abstract
The effects of intermixing of Al 0.54Ga 0.46As/GaAs/Al 0.54Ga 0.46As QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H 22 transition was found to be more sensitive to the implantation doses than that of H 11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.
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