Abstract
The effects of low energy proton irradiations (< 1.5 MeV) on GaAs CUT and pulsed laser diodes (RCA C30130 and Laser Diode Lab LD-60) operated at room temperature are reported in this study. A strong energy dependence is observed from 200 keV to 1 MeV which is the result of the nonuniform damage produced by protons. One potential complication is proton energy attenuation by surface materials (metallization, contacts, leads). A strong dependence on diode orientation is also observed---1.5 MeV protons incident parallel to the junc-tion plane and normal to the laser emission facet produce anywhere from a factor of ~ 5 to 50 times more damage than when incident normal to the broqd, currentinjecting face of the laser diode. Proton fluences as low as 10 to 10<sup>12</sup> p/cm<sup>2</sup> produced significant degradation in laser output power.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
