Protein adsorption on titanium dioxide: Effects on double layer and semiconductor space charge region studied by EIS

Abstract

The semiconductor properties of an n-type TiO 2 oxide surface and its modification by protein adsorption using electrochemical impedance spectroscopy ( EIS ) were studied. Impedance spectra under steady state conditions were obtained as a function of electrode potential and human serum albumin (HSA) concentration in solution. The effect of the adsorption potential on the EIS response was also analyzed ( E ads −0.70, −0.50 and −0.080 V vs. saturated calomel electrode). The impedance spectra were modeled using different equivalent circuits, and data analysis were performed by data fitting in the whole frequency range, as well as in the low and high frequency ranges. The electric representation that better fit experimental data consisted of two equivalent subcircuits composed by a combination of constant phase elements ( cpe 1 and cpe 2 ) and resistances ( R s and R 1 ). The cpe 1 element represented the distributed capacity in the semiconductor oxide. The cpe 2 element was associated with diffusional processes. We have analyzed EIS data based on a theoretical calculation of interface apparent capacitance ( C app ) from the cpe 1 parameters ( Q 1 and ϕ 1 ) and resistance elements. The changes in capacitance, produced by the presence of HSA, were associated to changes in the space charge layer capacitance of the semiconductor, as a result of the energy band bending near the surface. The values obtained for the R 1 element from the theoretical fitting procedures (in the high and whole frequency range) were correlated to the electric resistance inherent to the semiconductor properties having a value of 6.10 3 Ω cm 2 .