Abstract

Objective To study the protective effect of galanin on 2, 3-Dimethoxy-1, 4-naphthoquinone (DMNQ)-induced oxidative stress and cell damage in HEK-293A cells and its possible mechanisms. Methods The expression of galanin and its three receptors (GalR1-3) in HEK-293A were determined with RT-PCR technique. The cultured HEK-293A cells were divided into four groups: Control, DMNQ, DMNQ+ GAL and DMNQ+ AR-M1896 and the cell viability was measured with CellTiter 96 AQueous One Solution Cell Proliferation Assay (MTS). Results The RT-PCR data revealed the presence of galanin and its receptors in HEK-293A cells. The expression level was in the order of GalR2=Galanin>GalR3>GalR1. DMNQ caused oxidative stress and cell damage in HEK-293A cells with a dose-dependent manner with an IC50=13.4 μM. Application of galanin reduced the DMNQ-induced cellular toxicity in HEK-293A, which increased cell viability by 24.4% and 18.8% in 1 μM and 100 nM, respectively. AR-M1896, an agonist of GalR2 had a similar effect, increased cell viability by 8.7% and 8.9% in 1 μM and 100 nM, respectively. Conclusion These data suggest that galanin has a protective effect on DMNQ-induced oxidative stress and cell damage in HEK-293A cells, probably mediated by GalR2. Key words: Galanin; Galanin receptors; DMNQ; Oxidative stress; Protection

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