Abstract

The ways of creating a nanoelectronic element base (NEB) of Autonomous Air Vehicle (AАV) with small dimen-sions and weight are analyzed. The autonomy of these devices predetermines the principles of building their in-formation systems using artificial intelligence logic, significant memory resources, as well as functionally special-ized and high-speed information processing methods. And the cost restrictions involve the use of practically de-bugged nano- and microtechnologies for optical devices and integrated circuits. In addition, the small volume and weight of AAV necessitate the miniaturization of their NEB. At the same time, the operation of the AAV in various extreme conditions with increased radiation and bursts of the electromagnetic field (for example, in space) is not ruled out. Under these conditions, the semiconductor elements of their electronics are likely to fail. Therefore, in NEB of AAV, it is expedient to switch to nanovacuum-channel transistors (NVCT), which do not have semiconduc-tors (or their role is auxiliary). In NVKT, the nanochannel of electron transfer between the electrodes is replaced by a vacuum one, and the control is carried out by the voltage on the field electrode - the gate. At the same time, the nanoscale length of the gap between the emitter and the collector provides low voltages on the electrodes of the NVKT. In general, replacing a semiconductor with a vacuum can simplify and reduce the cost of transistor technol-ogy, make it more resistant to radiation and high-energy fields, and will allow to reach THz frequencies. And the creation of new types of NVKT (for example, using the control of the electron spin orientation) will increase the per-formance of AAV information transmission and processing tools.

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