Abstract
AbstractRoom‐temperature ferromagnetism has been theoretically predicted for Mn‐doped GaN, making this material promising for spintronic applications. The cover figure shows the defect molecule picture for Mn3+‐induced gap states, which are derived from the antibonding transition‐metal t2↑ orbitals and the dangling bond t2↑↓ states of the host lattice. One of the d‐like Mn3+ t2↑ levels is occupied by a hole. These localized spins together with free valence‐band holes mediate the magnetic coupling, resulting in a very high Curie temperature.The first author of the Feature Article [1], Tobias Graf, has been working on electrically detected magnetic resonance of III–V alloys, at the Walter Schottky Institut of TU München.
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