Abstract
AbstractThe suitability of plasma ion implantation (PII) for band gap engineering will be examined by calculations of the band gap's spatial variation. Plasma Ion Implantation is a method to modify the surface and subsurface properties of materials; the ions surrounding the target are forced into all plasma exposed surfaces simultaneously by virtue of high‐voltage pulses. We calculated the fluence and the ion energy distribution from the dynamic sheath model. The distribution of the ions within the target is subsequently simulated by the TRIDYN software. The concentration profiles are converted into a spatial variation of the band gap. The challenges inherent to the method are discussed by means of the examples of carbon (C) PII in silicon (Si) as well as nitrogen (N) PII in gallium arsenide (GaAs). The ion distribution within the material of the former example is suitable for the formation of the Si‐C alloy. On the other hand, the distribution of N ions in GaAs prevents the formation of the Ga‐As‐N alloy. The discussed methods could be a powerful tool for the prediction of materials properties from the plasma processing parameters, thus helping to design materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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