Abstract
We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB 2 toward superconducting electronics. The most serious problem in the thin film synthesis of MgB 2 is the high vapor pressure required for phase stability. This problem makes insitu film growth difficult. However, there has been substantial progress in thin film technology for MgB 2 in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB 2 films with T c ∼ 35 K. Furthermore, technology to produce single-crystal epitaxial MgB 2 films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB 2 has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
