Prospects and challenges for SiGe strained-layer epitaxy

Abstract

Two of the important developments in strained-layer epitaxy of SiGe structures are the demonstration of heterojunction bipolar can be increasing evidence that SiGe superlattices with direct band gap behavior can be made. The underlying materials growth technologies—limited-reaction chemical vapor deposition and molecular beam epitaxy of symmetrically strained structures—that have made these advances possible, are discussed wirh an eye toward future developments.