Abstract
Most of the sensors are based on different device architectures depending on the application type. A novel dopingless (DL) vertical Nanowire (VNW)-TFET is proposed that is used for the implementation of the gas sensor, biosensor, photo-detector and temperature sensor. Charge-plasma technique is used to provide the necessary doping for the proper functioning of the device; where metals with specific work functions are deposited on the source/drain region to accumulate charge carriers within the region. The device is designed with a spacer length of 5 nm that provided the enhanced device parameters. Smaller source/drain length helped in maintaining abrupt junction at the source/drain-channel interface even with a large spacer length. Heteromaterials such as Silicon-Germanium, Indium Antimonide, Indium Arsenide and Germanium-Tin are used as source materials for DL-VNW-TFET to compensate the low ON-current of the TFET devices. Exposed source/gate catalytic electrode, open source-cavity, photo-dielectric material/transparent conductive oxide (high work function) and heteromaterials are the key sensing elements of the implemented sensors. ON-current, OFF-current and threshold voltage are considered as the sensing parameters. Obtained results of the sensing parameters confirm the possible use of the proposed device for adaptive multi-sensing applications.
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