Abstract
In an effort to prepare thin films of novel semiconductor materials that contain only cost effective, abundant, and relatively less-toxic materials, SnmSb2nS3n+m (n = 1, m = 1, 2, 3) ingots sulfosalts materials were successfully grown via horizontal Bridgman method using high-purity tin, antimony and sulphur elements. Crushed powders of these ingots were used as raw materials for the vacuum thermal evaporation. So, SnSb2S4, Sn2Sb2S5 and Sn3Sb2S6 thin films were deposited by single source vacuum evaporation onto non-heated glass substrates. Their structure, composition and morphology are studied by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), atomic force microscopy, Raman scattering and optical measurements. XRD patterns show that polycrystalline SnmSb2nS3n+m thin films were obtained without heating the substrates. Optical measurements indicated a direct band gap in the range 1.47–1.63 eV and a strong absorption coefficient between 104 and 2.105 cm−1.
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