Abstract
The carrier mobility has been measured between 10 and 300 K in epitaxial layers of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (MOVPE). Experimental and calculated values are compared to obtain the compensation ratios. It is shown that above 77 K the experimental mobility can be calculated in a satisfactory way only by including scattering by localized potential centers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
