Abstract
We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.
Highlights
Electroabsorption modulators are semiconductor devices which can be used for controlling the intensity of a laser beam via an electric voltage and have only been reported for waveguide configuration
A clear exciton absorption peak at room temperature (RT) is observed in this high purity epilayer which makes it possible to develop a spatial light modulator (SLM)
Equation (1) is divided into two parts: one is absorption spectra with excitonic transition which is represented by Gaussian function and the other is band continuum absorption spectra which is represented by Heaviside and Sommerfeld factor
Summary
Electroabsorption modulators are semiconductor devices which can be used for controlling the intensity of a laser beam via an electric voltage and have only been reported for waveguide configuration. Casey et al [9] has discussed the strong relationship between the background impurities and optical absorption in bulk GaAs material They pointed out that the contribution of exciton on absorption can be observed in high purity (5 × 1016 cm−3) bulk GaAs even at RT. A clear exciton absorption peak at RT is observed in this high purity epilayer which makes it possible to develop a spatial light modulator (SLM). This epilayer with large depletion layer over 30 μm is operated at surface normal configuration. For the validity of our model we have compared with experimental result [12] and found the close agreement between them
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