Abstract
We propose a new approach to open the bandgap of graphene by fabricating a hexagonal nanoribbon network. We have successfully fabricated hexagonal graphene network pattern (GNP) out of exfoliated monolayer graphene by electron beam lithography. Transport characteristics were investigated using a top-gated Hall-bar device. The electron mobility of GNP with 40 nm ribbon width, d, was 452 cm2 V-1 s-1 at 90 K and on/off ratio of top-gated field-effect transistors (FET) exceeded 8.6 at room temperature, which shows significant improvement compared with on/off ratio of 2 in control sample without network pattern.
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