Abstract
We have performed a theoretical study of exciton binding energy and effective band gap energy in ZnS/BexZn1-xS single quantum wells (SQWs). With increasing beryllium (Be) content (x), conduction and valence band offsets increase in ZnS/BexZn1-xS SQWs and thus exciton binding energy increases. We conclude that the BexZn1-xS barrier layer is useful for designing ZnS-based quantum wells (QWs).
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