Proposal for a universal nonvolatile logic device based on the phase change magnetic material

Abstract

Memory devices that are capable of logic functions have shown great potential in constructing non-von Neumann parallel computing architecture. Here, we proposed a universal nonvolatile logic device, utilizing the amorphous–crystalline phase transition behavior and phase change control of ferromagnetism property of Mn-doped GeTe phase change magnetic material (PCMM). The materials implication (IMP) logic in one step and sequential NAND logic were presented theoretically, based on which the functional completeness of Boolean logic could be realized. The logic operating results can be stored directly in the residual magnetization of the PCMM. This proposal may promote the design and future experimental implementation of next generation electromagnetic devices for data storage and computing.