Abstract
A monolithic high voltage 1.87 eV AlGaAs/1.65 eV AlGaAs/1.42 eV GaAs triple junction (3J) photovoltaic (PV) cell design is presented. The motivation for this particular design is to reduce resistive I 2 R power loss that degrades PV module efficiency, to bypass the use of limited resources such as indium and germanium, and to simplify epitaxial growth with the lattice matched Al x Ga 1− x As semiconductor family.
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