Abstract
Raman scattering spectroscopy was used to study the effect of a phosphorus (P) impurity on the aggregation of displaced carbon (C) atoms into graphite clusters. The P-doped silicon carbide (SiC) samples at concentration of 1.0×1020 cm−3 were produced by ion implantation. The P-doped and P-free SiC single crystals were irradiated with two fluences of 1×1016 and 2×1016 cm−2 at room temperature. The Raman peaks at 1385 and 1562 cm−1 are observed for P-containing SiC. They originate from the breathing vibration of six-membered C rings and stretching vibration of C (sp2)–C (sp2) bonds. This reveal that the irradiation resulted in the formation of graphite clusters. The irradiated samples were isochronally annealed up to 500 °C to investigate the thermal stability. The thermal stability of graphite cluster is approximately 300-400 °C.
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