Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage

Abstract

The resistance to plasma-induced damage of various nanoporous, ultra low-κ porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of Si–CH3 and Si(CH3)2 bonding exhibited less plasma damage than similar films with lower carbon content.