Abstract
Growth of YMnO3 on GaN (0001) using molecular beam epitaxy at temperatures greater than 850°C resulted in the spontaneous formation of crystalline prisms, ranging from 20to60nm in height and 50to500nm in lateral size, surrounded by a 6nm thick continuous YMnO3 film. The local dielectric properties were measured using scanning surface probe microscopy. The prisms were ferroelectric at room temperature and their ferroelectric properties were enhanced for taller prisms. This is consistent with these structures being less constrained than the continuous layer, which is clamped by the surrounding unpolarized film.
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