Abstract
Previously, it has been well established that in an IBAD architecture for coated conductors, (1) LaMnO3 (LMO) buffer layers are structurally and chemically compatible with an underlying homo-epitaxial MgO layer and (2) high current density YBCO films can be grown on these LMO templates. In the present work, the homo-epi MgO layer has been successfully eliminated and a LMO cap layer was grown directly on the IBAD-MgO template. The performance of the LMO/IBAD-MgO samples has been qualified by depositing 1 mum-thick YBCO coatings by pulsed laser deposition. Electrical transport measurements of YBCO films on the standard (with homo-epi MgO) and simplified (without homo-epi MgO) IBAD architectures were carried out. The angular dependence of critical current density (J c) is similar for both IBAD architectures. XRD measurements indicate good, c-axis aligned YBCO films. Transmission electron microscopy (TEM) images reveal that microstructures of YBCO/LMO/IBAD-MgO and YBCO/LMO/homo-epi MgO/IBAD-MgO templates are similar. These results demonstrate the strong potential of using LMO as a single cap layer directly on IBAD-MgO for the development of a simplified IBAD architecture.
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