Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

Abstract

The properties of a GaN Metal–Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate–source voltage ( V GS) and drain–source voltage ( V DS) were obtained, then the characteristics of the drain current ( I DS) versus the drain–source voltage ( V DS) and the transconductance ( G m) versus V GS characteristics were determined. At V DS =15 V and V GS =0 V, I DS is 5.03 A/cm, which is higher value. The G m− V GS curve shows bell shaped and the maximum G m is 112 ms/mm at V DS =15 V and V GS =1.5 V. The current gain cutoff frequency ( f T) is 98 GHz at V DS =15 V and V GS =0 V.