Abstract
Chemical vapor deposition of tungsten silicide (WSix) from WF6 and SiH2Cl2 [JB Price, S. Wu, Y.Chow, and J. Mendonca, Semicon West (1986)] at higher deposition temperatures (450–650 °C) than the conventional WF6 and SiH4 (250–400 °C) process has been characterized using a plasma enhanced, single-wafer, cold-wall, radiantly heated system with temperature control utilizing a thermocouple in contact with the backside of the wafer. Film properties such as silicon to tungsten ratio, fluorine and chlorine concentration, resistivity, and film stress were studied as a function of substrate temperature, reactant composition, and flow rates. The film composition was measured by Rutherford backscattering spectrometry. The silicon to tungsten ratio is a function of deposition temperature at a fixed flow (x varying from 2.0–2.8 through the temperature range of 450–650 °C). The as-deposited resistivity is also a strong function of deposition temperature. The chlorine and fluorine distributions in the WSix film were measured using secondary ion mass spectrometry. The fluorine concentration was found to be much lower than levels reported by conventional WF6/SiH4 chemistry with as-deposited values of 9×1015 to 3×1018/cm3 compared to 1.3×1020 cm3 by M. Fukumoto and T. Ohzone [Appl. Phys. Lett. 50, 894 (1987)].
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