Abstract
The structural, electrical, and optical properties of GaN epilayers grown on various ion-implanted sapphire (0001) substrates by metal-organic chemical vapor deposition (MOCVD) were investigated. Sapphire is a typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ion-implanted sapphire (0001) substrates. The crystal and optical properties of GaN epilayers grown in ion-implanted sapphire (0001) substrate were improved. Also, surfaces excessively roughened and modified by ions degraded the GaN epilayers. Not only the ionic radius but also the chemical species of implanted sapphire (0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers can be obtained using ion-implanted sapphire (0001) substrate with various ions.
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