Abstract
Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi 4− x/3 Ti 4− x V x O 15 (SBTV− x) were synthesized. The vanadium doping content, x, rangs from 0.00 to 0.06. The crystal structure of SrBi 4Ti 4O 15 is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2 P r). The 2 P r of STBV−0.03 reaches a very large value, which is over 50 μC/cm 2 and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi 4Ti 4O 15. V-doping can improve the electric properties of SrBi 4Ti 4O 15 without sacrificing its thermal stableness.
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