Abstract
From measurements of changes in electrical resistivity of uranium carbide due to quenching and annealing, a vacancy formation energy of 1.0 ± 0.1 eV and a migration activation energy of 1.45 ± 0.3 eV were determined which are attributed to C-vacancies. It is shown that in uranium carbide the migration of Cand U-vacancies occurs very likely in the sublattices of carbon and uranium, respectively. For U-vacancies a formation energy between 1.4 and 1.7 eV and a migration activation energy of 2.2 eV are estimated. Furthermore it is concluded that in the lower temperature range (< 1400 °C) the diffusion rate of carbon is determined by a single vacancy diffusion mechanism and in the higher temperature range (> 1400 °C) by a divacancy diffusion mechanism in the carbon sublattice. The diffusion of U-atoms is assumed to be determined by a single vacancy mechanism in the uranium sublattice in the entire temperature range investigated.
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