Abstract
Undoped and N–In codoped ZnO films were deposited on Si(1 0 0) by ultrasonic spray pyrolysis. The structural, electrical and optical properties of the ZnO based films were investigated. Results indicate that the low-resistivity p-type ZnO film with the resistivity of 5.04 × 10 −3 Ω cm, high mobility of 33.5 cm 2/V s, carrier concentration of 3.69 × 10 19 cm −3, and Seebeck coefficient of 825 μV/K was obtained by the codoping of N and In. In the photoluminescence measurement, a strong near-band-edge emission was observed for both undoped and codoped films, while the deep-level emission was almost undetectable.
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