Properties of Tungsten Thin Films Produced with the RF-Sputtering Technique

Abstract

For the purpose of building very sensitive light and phonon detectors, as e.g. applied in the Dark Matter (DM) experiment CRESST (Cryogenic Rare Event Search with Superconducting Thermometers), transition edge sensors (TESs) in combination with a massive absorber crystal are used. To ensure high sensitivity of the detectors, low heat capacities, i.e. low working temperatures of about 10 mK are aimed at. Therefore, TESs made of tungsten thin films exhibiting the alpha-tungsten (α-W) phase with transition temperatures of T c =10–15 mK are required. We have produced tungsten thin films with T c in the range of 25–55 mK by rf-sputtering. To decouple the thermometer production from the choice of the target material and to avoid heating cycles of the absorber crystal, a composite design for detector production is applied. The composite design includes fabrication of the TES on a separate substrate and then attaching of this separate TES to a massive absorber crystal by gluing. For this purpose small sapphire substrates are used for the deposition of the TES. Properties of tungsten thin films grown with the rf-sputtering technique as well as first results of composite detectors built with these films acting as TESs will be presented.