Abstract
The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO) 1− x (In 2O 3) x have been grown by electron beam evaporation technique for different concentrations of In 2O 3 ( x = 0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from optical data and hence to increased electrical conductivity, which degraded the transparency of the films. An improvement of the electrical and optical properties of Cadmium indium oxide (CdIn 2O 4) has been achieved by post-deposition annealing. A resistivity value of 7 × 10 − 5 Ω cm and transmittance of 92% in the near infrared region and 82% in the visible region have been obtained after annealing at 300 °C for 90 min in air.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
