Properties of topological insulator Bi2Se3 films prepared by thermal evaporation growth on different substrates

Abstract

Topological insulator Bi2Se3 thin films were grown by the thermal evaporation deposition on different substrates and their phase structures and magneto-transport properties were discussed. The films growth is along the c-axis, and their surfaces exhibited terrace-like quintuple layers. Resistivity upturn as well as weak anti-localization was observed only in the film with Si and LAO substrates. The linear magneto-resistance (LMR) under high field was found, which was associated with the gapless topological surface states and the quantum origin. The results indicate that the films are highly uniform.