Abstract

In this study, the morphology and crystallographic properties of thin titanium (Ti) films grown on atomically smooth gallium arsenide (GaAs) substrates are examined. The films were grown by direct current magnetron sputtering in an argon (Ar) flow. The surface is found to be atomically smooth with steps up to 0.1 nm in height and a morphology close to that of the Ti film substrate with nominal thicknesses of 5 and 10 nm. Increasing the film thickness to 60 nm leads to a noticeable surface reconstruction, associated with the formation of clusters up to 16 nm in height. As per X-ray diffraction studies, all films show a crystal structure of the α-Ti phase. In this case, an increase in the crystallite size from 7 to 20 nm and an increase in the film nominal thickness from 5 to 60 nm are also typical. Based on atomic force microscopy analysis, a change is observed in surface morphology. When the film thickness increases from 10 to 60 nm, clusters are formed on the Ti film surface, measuring 1 µm in diameter and 16 nm in height.

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