Abstract
The main thermoelectric properties, i.e. Seebeck coefficient α, electrical resistivity ϱ, thermal conductivity K and the coefficient Z of thermoelectric merit, are determined for narrow-gap V 2VI 3 semiconductors and semimetals. Variations in α, K and ϱ depending on the thickness e of the thin film are also measured. The essential technical characteristics such as the sensitivity S f to flux, the time constant τ and the noise equivalent power of a wide-band radiation detector are modelled according to the adapted thermal conductance eK. The most significant results concerning specific applications are described. Knowledge of these data is useful for the production of sensors based on the Seebeck effect, such as thermocouples, thermopiles, radiation detectors, hyperfrequency power sensors and electrical converters.
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