Abstract
The procedure used to produce high quality V 3Si superconducting films is described. Results are reported for films obtained by thermal annealing under vacuum of a few vanadium and silicon layers sequentially deposited by electron-beam evaporation. ‘Resistive’ critical temperatures up to 16.2 K with very sharp transition width ( ΔT c ≤ 0.1 K) are observed. The critical temperature as a function of the annealing temperature preparation parameter and normal state parameters (lattice constant, resistance ratio) are shown. Finally the temperature dependence of the normal state resistivity is discussed in the 4framework of a phenomenological ‘shunt-resistor model’.
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